MSMCJLCE75AE3TR vs MQSMCJLCE75AE3 feature comparison

MSMCJLCE75AE3TR Microsemi Corporation

Buy Now Datasheet

MQSMCJLCE75AE3 Microsemi Corporation

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Part Package Code DO-214AB DO-214AB
Package Description R-PDSO-C2 R-PDSO-C2
Pin Count 2 2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Max 92.1 V 92.1 V
Breakdown Voltage-Min 83.3 V 83.3 V
Breakdown Voltage-Nom 87.7 V 87.7 V
Clamping Voltage-Max 121 V 121 V
Configuration SINGLE SINGLE
Diode Capacitance-Min 90 pF
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Qualification Status Not Qualified Not Qualified
Reference Standard IEC-61000-4-2, 4-4, 4-5 MIL-19500
Rep Pk Reverse Voltage-Max 75 V 75 V
Reverse Current-Max 5 µA
Reverse Test Voltage 75 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 1
JESD-609 Code e3
Moisture Sensitivity Level 1
Terminal Finish MATTE TIN

Compare MSMCJLCE75AE3TR with alternatives

Compare MQSMCJLCE75AE3 with alternatives