MSMCGLCE30AE3TR vs MXLSMCGLCE30AE3 feature comparison

MSMCGLCE30AE3TR Microsemi Corporation

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MXLSMCGLCE30AE3 Microchip Technology Inc

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer MICROSEMI CORP MICROCHIP TECHNOLOGY INC
Part Package Code DO-215AB
Package Description R-PDSO-G2 ROHS COMPLIANT, PLASTIC, SMCG, 2 PIN
Pin Count 2
Reach Compliance Code compliant compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature TR, 7 INCH: 750 HIGH RELIABILITY
Breakdown Voltage-Max 36.8 V 36.8 V
Breakdown Voltage-Min 33.3 V 33.3 V
Breakdown Voltage-Nom 35.05 V 35.05 V
Clamping Voltage-Max 48.4 V 48.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-215AB DO-215AB
JESD-30 Code R-PDSO-G2 R-PDSO-G2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 30 V 30 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 2
JESD-609 Code e3
Moisture Sensitivity Level 1
Terminal Finish MATTE TIN

Compare MSMCGLCE30AE3TR with alternatives

Compare MXLSMCGLCE30AE3 with alternatives