MSMCGLCE13AE3 vs 1.5SMC8.2A-E3/57T feature comparison

MSMCGLCE13AE3 Microsemi Corporation

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1.5SMC8.2A-E3/57T Vishay Semiconductors

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Pbfree Code Yes Yes
Rohs Code Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer MICROSEMI CORP VISHAY SEMICONDUCTORS
Part Package Code DO-215AB DO-214AB
Package Description SMCG, 2 PIN R-PDSO-C2
Pin Count 2 2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature HIGH RELIABILITY EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 15.9 V 8.61 V
Breakdown Voltage-Min 14.4 V 7.79 V
Breakdown Voltage-Nom 15.15 V 8.2 V
Clamping Voltage-Max 21.5 V 12.1 V
Configuration SINGLE SINGLE
Diode Capacitance-Min 100 pF
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-215AB DO-214AB
JESD-30 Code R-PDSO-G2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 6.5 W
Qualification Status Not Qualified Not Qualified
Reference Standard IEC-61000-4-2, 4-4, 4-5
Rep Pk Reverse Voltage-Max 13 V 7.02 V
Reverse Current-Max 5 µA
Reverse Test Voltage 13 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN Matte Tin (Sn)
Terminal Form GULL WING C BEND
Terminal Position DUAL DUAL
Base Number Matches 2 2
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30

Compare MSMCGLCE13AE3 with alternatives

Compare 1.5SMC8.2A-E3/57T with alternatives