MSMCGLCE13A vs JANTXV1N5610 feature comparison

MSMCGLCE13A Microsemi Corporation

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JANTXV1N5610 Microsemi Corporation

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Pbfree Code No No
Rohs Code No No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Part Package Code DO-215AB
Package Description SMCG, 2 PIN
Pin Count 2 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Max 15.9 V
Breakdown Voltage-Min 14.4 V 33 V
Breakdown Voltage-Nom 15.15 V
Clamping Voltage-Max 21.5 V
Configuration SINGLE SINGLE
Diode Capacitance-Min 100 pF
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-215AB
JESD-30 Code R-PDSO-G2 O-XALF-W2
JESD-609 Code e0 e0
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 3 W
Qualification Status Not Qualified Not Qualified
Reference Standard IEC-61000-4-2, 4-4, 4-5 MIL-19500/434C
Rep Pk Reverse Voltage-Max 13 V 30.5 V
Reverse Current-Max 5 µA
Reverse Test Voltage 13 V
Surface Mount YES NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD TIN LEAD
Terminal Form GULL WING WIRE
Terminal Position DUAL AXIAL
Base Number Matches 4 1
Case Connection ISOLATED

Compare MSMCGLCE13A with alternatives

Compare JANTXV1N5610 with alternatives