MSMCGLCE130AE3TR vs SM15T150AHE3/9AT feature comparison

MSMCGLCE130AE3TR Microsemi Corporation

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SM15T150AHE3/9AT Vishay Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP VISHAY SEMICONDUCTORS
Part Package Code DO-215AB DO-214AB
Package Description R-PDSO-G2 R-PDSO-C2
Pin Count 2 2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature HIGH RELIABILITY EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY
Breakdown Voltage-Max 159 V 158 V
Breakdown Voltage-Min 144 V 143 V
Breakdown Voltage-Nom 151.5 V 150 V
Clamping Voltage-Max 209 V 207 V
Configuration SINGLE SINGLE
Diode Capacitance-Min 90 pF
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-215AB DO-214AB
JESD-30 Code R-PDSO-G2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 6.5 W
Qualification Status Not Qualified Not Qualified
Reference Standard IEC-61000-4-2, 4-4, 4-5 AEC-Q101
Rep Pk Reverse Voltage-Max 130 V 128 V
Reverse Current-Max 5 µA
Reverse Test Voltage 130 V 128 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form GULL WING C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Base Number Matches 1 1
Pbfree Code Yes
JESD-609 Code e3
Moisture Sensitivity Level 1
Terminal Finish MATTE TIN

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Compare SM15T150AHE3/9AT with alternatives