MSMBJ40AE3/TR vs MXSMBJ40AE3 feature comparison

MSMBJ40AE3/TR Microsemi Corporation

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MXSMBJ40AE3 Microchip Technology Inc

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer MICROSEMI CORP MICROCHIP TECHNOLOGY INC
Package Description ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN SMBJ, 2 PIN
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Max 49.1 V 49.1 V
Breakdown Voltage-Min 44.4 V 44.4 V
Breakdown Voltage-Nom 46.75 V
Clamping Voltage-Max 64.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 250 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.38 W 1.38 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 40 V 40 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 10
Base Number Matches 2 2
Reference Standard IEC-61000-4-2, 4-4, 4-5; MIL-19500

Compare MSMBJ40AE3/TR with alternatives

Compare MXSMBJ40AE3 with alternatives