We use Cookies to give you best experience on our website. By using our website and services, you expressly agree to the placement of our performance, functionality and advertising cookies. Please see our Privacy Policy for more information.

Register or Sign In

MS2575 vs MRF1035MB feature comparison

MS2575 Microsemi Corporation

Buy Now Datasheet

MRF1035MB Motorola Semiconductor Products

Buy Now Datasheet
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP MOTOROLA INC
Package Description HERMETIC SEALED, M115, 4 PIN DISK BUTTON, O-CRDB-F4
Pin Count 4
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Additional Feature HIGH RELIABILITY
Case Connection BASE BASE
Collector Current-Max (IC) 3 A 2 A
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 15 10
Highest Frequency Band L BAND L BAND
JESD-30 Code O-CRDB-F4 O-CRDB-F4
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 4 4
Operating Temperature-Max 200 °C 150 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND ROUND
Package Style DISK BUTTON DISK BUTTON
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD
Terminal Form FLAT FLAT
Terminal Position RADIAL RADIAL
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Collector-Base Capacitance-Max 15 pF
Power Dissipation-Max (Abs) 35 W
Power Gain-Min (Gp) 10 dB
Transistors » RF Power Bipolar Transistors
Transistors » RF Power Bipolar Transistors