MS1N8177
vs
1N8177
feature comparison
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Transferred
|
Transferred
|
Ihs Manufacturer |
MICROSEMI CORP
|
MICROSEMI CORP
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.50
|
8541.10.00.50
|
Additional Feature |
HIGH RELIABILITY
|
HIGH RELIABILITY
|
Breakdown Voltage-Min |
114 V
|
114 V
|
Case Connection |
ISOLATED
|
ISOLATED
|
Clamping Voltage-Max |
168 V
|
168 V
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
JESD-30 Code |
O-LALF-W2
|
O-LALF-W2
|
Non-rep Peak Rev Power Dis-Max |
150 W
|
150 W
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
175 °C
|
175 °C
|
Operating Temperature-Min |
-55 °C
|
-55 °C
|
Package Body Material |
GLASS
|
GLASS
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
Power Dissipation-Max |
1 W
|
1 W
|
Reference Standard |
IEC-61000-4-2,4-4,4-5
|
IEC-61000-4-2,4-4,4-5
|
Rep Pk Reverse Voltage-Max |
100 V
|
100 V
|
Reverse Current-Max |
0.5 µA
|
0.5 µA
|
Surface Mount |
NO
|
NO
|
Technology |
AVALANCHE
|
AVALANCHE
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
AXIAL
|
AXIAL
|
Base Number Matches |
2
|
2
|
|
|
|