MS1N8170
vs
1N8170USE3
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
MICROSEMI CORP
|
MICROCHIP TECHNOLOGY INC
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.50
|
|
| Additional Feature |
HIGH RELIABILITY
|
HIGH RELIABILITY
|
| Breakdown Voltage-Min |
58.9 V
|
58.9 V
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Clamping Voltage-Max |
85.3 V
|
85.3 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
O-LALF-W2
|
O-LELF-R2
|
| Non-rep Peak Rev Power Dis-Max |
150 W
|
150 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
1 W
|
1 W
|
| Reference Standard |
IEC-61000-4-2,4-4,4-5
|
IEC-61000-4-2, 4-4
|
| Rep Pk Reverse Voltage-Max |
53 V
|
53 V
|
| Reverse Current-Max |
0.5 µA
|
|
| Surface Mount |
NO
|
YES
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Form |
WIRE
|
WRAP AROUND
|
| Terminal Position |
AXIAL
|
END
|
| Base Number Matches |
2
|
2
|
| Package Description |
|
MELF-2
|
| Factory Lead Time |
|
21 Weeks
|
| JESD-609 Code |
|
e3
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Terminal Finish |
|
Matte Tin (Sn)
|
| Time@Peak Reflow Temperature-Max (s) |
|
10
|
|
|
|
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