MS1N8149
vs
MX1N8149US
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
MICROSEMI CORP
MICROSEMI CORP
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
HIGH RELIABILITY
Breakdown Voltage-Min
7.79 V
7.79 V
Case Connection
ISOLATED
Clamping Voltage-Max
12.8 V
12.8 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
O-LELF-R2
Non-rep Peak Rev Power Dis-Max
150 W
150 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Reference Standard
IEC-61000-4-2,4-4,4-5
Rep Pk Reverse Voltage-Max
6.8 V
6.8 V
Reverse Current-Max
20 µA
20 µA
Surface Mount
NO
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WRAP AROUND
Terminal Position
AXIAL
END
Base Number Matches
2
2
Package Description
MELF-2
Diode Capacitance-Min
4 pF
Reverse Test Voltage
6.8 V