MS1N8149 vs MQ1N8149US feature comparison

MS1N8149 Microsemi Corporation

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MQ1N8149US Microchip Technology Inc

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Rohs Code No No
Part Life Cycle Code Transferred Active
Ihs Manufacturer MICROSEMI CORP MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Breakdown Voltage-Min 7.79 V 7.79 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 12.8 V 12.8 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 O-LELF-R2
Non-rep Peak Rev Power Dis-Max 150 W 150 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Reference Standard IEC-61000-4-2,4-4,4-5 IEC-61000-4-2, 4-4; MIL-19500
Rep Pk Reverse Voltage-Max 6.8 V 6.8 V
Reverse Current-Max 20 µA
Surface Mount NO YES
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WRAP AROUND
Terminal Position AXIAL END
Base Number Matches 2 2
Package Description MELF-2
Factory Lead Time 25 Weeks

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