MS1N5303 vs JANTX1N5303 feature comparison

MS1N5303 Microsemi Corporation

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JANTX1N5303 Cobham PLC

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP KNOX SEMICONDUCTORS INC
Package Description O-LALF-W2 O-LALF-W2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type CURRENT REGULATOR DIODE CURRENT REGULATOR DIODE
JEDEC-95 Code DO-7 DO-7
JESD-30 Code O-LALF-W2 O-LALF-W2
JESD-609 Code e0 e0
Knee Impedance-Max 92000 Ω 92000 Ω
Limiting Voltage-Max 1.65 V 1.65 V
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 200 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Power Dissipation-Max 0.475 W 0.5 W
Qualification Status Not Qualified Not Qualified
Regulation Current-Nom (Ireg) 1.6 mA 1.6 mA
Rep Pk Reverse Voltage-Max 100 V 100 V
Surface Mount NO NO
Technology FIELD EFFECT FIELD EFFECT
Terminal Finish TIN LEAD TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 6
Part Package Code DO-7
Pin Count 2
Dynamic Impedance-Min 475000 Ω
Reference Standard MIL-19500/463

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