MRF947BT1 vs NE88912 feature comparison

MRF947BT1 Freescale Semiconductor

Buy Now Datasheet

NE88912 California Eastern Laboratories (CEL)

Buy Now Datasheet
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer FREESCALE SEMICONDUCTOR INC CALIFORNIA EASTERN LABORATORIES
Package Description SMALL OUTLINE, R-PDSO-G3 CYLINDRICAL, O-MBCY-W4
Pin Count 3
Manufacturer Package Code CASE 419-02
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.75
Samacsys Manufacturer NXP
Additional Feature LOW NOISE LOW NOISE
Collector Current-Max (IC) 0.05 A 0.05 A
Collector-Emitter Voltage-Max 10 V 12 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 100 20
Highest Frequency Band L BAND L BAND
JESD-30 Code R-PDSO-G3 O-MBCY-W4
Number of Elements 1 1
Number of Terminals 3 4
Operating Temperature-Max 150 °C 200 °C
Package Body Material PLASTIC/EPOXY METAL
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE CYLINDRICAL
Polarity/Channel Type NPN PNP
Power Dissipation-Max (Abs) 0.175 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Form GULL WING WIRE
Terminal Position DUAL BOTTOM
Transistor Application AMPLIFIER SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 8000 MHz 4000 MHz
Base Number Matches 1 1
Collector-Base Capacitance-Max 1.5 pF
JEDEC-95 Code TO-72
Power Dissipation Ambient-Max 0.3 W

Compare MRF947BT1 with alternatives

Compare NE88912 with alternatives