MRF8S26120HSR3
vs
MRF8S26120HR3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
NXP SEMICONDUCTORS
NXP SEMICONDUCTORS
Package Description
FLATPACK, R-CDFP-F2
FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code
unknown
unknown
ECCN Code
5A991
5A991
HTS Code
8541.29.00.75
8541.29.00.75
Configuration
SINGLE
SINGLE
DS Breakdown Voltage-Min
65 V
65 V
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band
S BAND
S BAND
JESD-30 Code
R-CDFP-F2
R-CDFM-F2
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
225 °C
225 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLATPACK
FLANGE MOUNT
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
FLAT
FLAT
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
40
40
Transistor Application
AMPLIFIER
AMPLIFIER
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Case Connection
SOURCE
Compare MRF8S26120HSR3 with alternatives
Compare MRF8S26120HR3 with alternatives