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MRF8S26120HSR3 vs AFT26H160-4S4R3 feature comparison

MRF8S26120HSR3 Freescale Semiconductor

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AFT26H160-4S4R3 NXP Semiconductors

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer FREESCALE SEMICONDUCTOR INC NXP SEMICONDUCTORS
Package Description ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN ,
Pin Count 2
Manufacturer Package Code CASE 465A-06
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.75 8541.29.00
Configuration SINGLE SINGLE
DS Breakdown Voltage-Min 65 V
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band S BAND S BAND
JESD-30 Code R-CDFP-F2
Number of Elements 1 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 225 °C 225 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLATPACK
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40 40
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Base Number Matches 1 1
Transistors » RF Power Field-Effect Transistors
Transistors » RF Power Field-Effect Transistors

Compare MRF8S26120HSR3 with alternatives

Compare AFT26H160-4S4R3 with alternatives