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MRF8S21200HSR6 vs MD7P19130HR3 feature comparison

MRF8S21200HSR6 NXP Semiconductors

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MD7P19130HR3 Freescale Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer NXP SEMICONDUCTORS FREESCALE SEMICONDUCTOR INC
Package Description ROHS COMPLIANT, NI-1230S, CASE 375E-04, 4 PIN FLANGE MOUNT, R-CDFM-F4
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.75 8541.29.00.75
Factory Lead Time 4 Weeks
Case Connection SOURCE SOURCE
Configuration COMMON SOURCE, 2 ELEMENTS COMMON SOURCE, 2 ELEMENTS
DS Breakdown Voltage-Min 65 V 65 V
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band S BAND S BAND
JESD-30 Code R-CDFP-F4 R-CDFM-F4
Number of Elements 2 2
Number of Terminals 4 4
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 225 °C 225 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR RECTANGULAR
Package Style FLATPACK FLANGE MOUNT
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 40 40
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Base Number Matches 2 3
Pin Count 4
Manufacturer Package Code CASE 465M-01
Transistors » RF Power Field-Effect Transistors
Transistors » RF Power Field-Effect Transistors

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