MRF8P18265HSR6
vs
AFT20P140-4WNR3
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NXP SEMICONDUCTORS
|
| Package Description |
FLATPACK, R-CQFP-F8
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.75
|
8541.29.00
|
| Case Connection |
SOURCE
|
SOURCE
|
| Configuration |
SEPARATE, 2 ELEMENTS
|
SEPARATE, 2 ELEMENTS
|
| DS Breakdown Voltage-Min |
65 V
|
65 V
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Highest Frequency Band |
L BAND
|
S BAND
|
| JESD-30 Code |
R-CQFP-F8
|
|
| Number of Elements |
2
|
1
|
| Number of Terminals |
8
|
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
225 °C
|
125 °C
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
FLATPACK
|
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
|
| Terminal Form |
FLAT
|
|
| Terminal Position |
QUAD
|
|
| Time@Peak Reflow Temperature-Max (s) |
40
|
40
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
1
|
1
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
3
|
| Terminal Finish |
|
Tin (Sn)
|
|
|
|
Compare MRF8P18265HSR6 with alternatives
Compare AFT20P140-4WNR3 with alternatives