MRF858S
vs
MRF858S
feature comparison
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
MOTOROLA INC
|
FREESCALE SEMICONDUCTOR INC
|
| Package Description |
FLATPACK, R-CDFP-F6
|
FLATPACK, R-CDFP-F6
|
| Pin Count |
6
|
6
|
| Manufacturer Package Code |
CASE 319A-02
|
CASE 319A-02
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.75
|
|
| Additional Feature |
WITH EMITTER BALLASTING RESISTORS
|
WITH EMITTER BALLASTING RESISTOR
|
| Collector-Base Capacitance-Max |
8 pF
|
8 pF
|
| Collector-Emitter Voltage-Max |
30 V
|
30 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
30
|
|
| Highest Frequency Band |
ULTRA HIGH FREQUENCY BAND
|
ULTRA HIGH FREQUENCY BAND
|
| JESD-30 Code |
R-CDFP-F6
|
R-CDFP-F6
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
6
|
6
|
| Operating Temperature-Max |
200 °C
|
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLATPACK
|
FLATPACK
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation Ambient-Max |
20 W
|
|
| Power Dissipation-Max (Abs) |
20 W
|
|
| Power Gain-Min (Gp) |
11 dB
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
FLAT
|
FLAT
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
|
|
|
Compare MRF858S with alternatives
Compare MRF858S with alternatives