We use Cookies to give you best experience on our website. By using our website and services, you expressly agree to the placement of our performance, functionality and advertising cookies. Please see our Privacy Policy for more information.

Register or Sign In

MRF6S21140HSR3 vs MRF5P21180HR6 feature comparison

MRF6S21140HSR3 NXP Semiconductors

Buy Now Datasheet

MRF5P21180HR6 Freescale Semiconductor

Buy Now Datasheet
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer NXP SEMICONDUCTORS FREESCALE SEMICONDUCTOR INC
Package Description , FLANGE MOUNT, R-CDFM-F4
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.75 8541.29.00.75
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) 40 NOT SPECIFIED
Base Number Matches 3 4
Rohs Code Yes
Pin Count 4
Manufacturer Package Code CASE 375D-05
Case Connection SOURCE
Configuration COMMON SOURCE, 2 ELEMENTS
DS Breakdown Voltage-Min 65 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band S BAND
JESD-30 Code R-CDFM-F4
Number of Elements 2
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 530 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transistors » RF Power Field-Effect Transistors
Transistors » RF Power Field-Effect Transistors

Compare MRF6S21140HSR3 with alternatives

Compare MRF5P21180HR6 with alternatives