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MRF6S21100HR3 vs MRF6S21100HSR3 feature comparison

MRF6S21100HR3 Motorola Mobility LLC

Buy Now Datasheet

MRF6S21100HSR3 Motorola Mobility LLC

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MOTOROLA INC MOTOROLA INC
Package Description FLANGE MOUNT, R-CDFM-F2 FLATPACK, R-CDFP-F2
Pin Count 2 2
Manufacturer Package Code CASE 465-06 CASE 465A-06
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Case Connection SOURCE SOURCE
Configuration SINGLE SINGLE
DS Breakdown Voltage-Min 68 V 68 V
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band S BAND S BAND
JESD-30 Code R-CDFM-F2 R-CDFP-F2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 200 °C 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLATPACK
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 388 W 388 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Base Number Matches 5 4
Transistors » RF Power Field-Effect Transistors
Transistors » RF Power Field-Effect Transistors

Compare MRF6S21100HR3 with alternatives

Compare MRF6S21100HSR3 with alternatives