MRF536
vs
BF241D-AMMO
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
MOTOROLA INC
|
NXP SEMICONDUCTORS
|
| Package Description |
DISK BUTTON, O-PRDB-F4
|
CYLINDRICAL, O-PBCY-W3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
0.03 A
|
0.025 A
|
| Collector-Base Capacitance-Max |
1.3 pF
|
0.5 pF
|
| Collector-Emitter Voltage-Max |
10 V
|
40 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
20
|
35
|
| Highest Frequency Band |
ULTRA HIGH FREQUENCY BAND
|
|
| JESD-30 Code |
O-PRDB-F4
|
O-PBCY-W3
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
DISK BUTTON
|
CYLINDRICAL
|
| Polarity/Channel Type |
PNP
|
NPN
|
| Power Dissipation-Max (Abs) |
0.3 W
|
|
| Power Gain-Min (Gp) |
8.5 dB
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
NO
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
FLAT
|
WIRE
|
| Terminal Position |
RADIAL
|
BOTTOM
|
| Transistor Application |
SWITCHING
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
5000 MHz
|
150 MHz
|
| Base Number Matches |
1
|
1
|
| JEDEC-95 Code |
|
TO-92
|
|
|
|
Compare MRF536 with alternatives
Compare BF241D-AMMO with alternatives