MRF175LU
vs
BLF548,112
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Yes
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
TE CONNECTIVITY LTD
NXP SEMICONDUCTORS
Pin Count
6
2
Manufacturer Package Code
CASE 333-04
SOT262A2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Configuration
SINGLE
COMMON SOURCE, 2 ELEMENTS
DS Breakdown Voltage-Min
65 V
65 V
Drain Current-Max (ID)
13 A
15 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
ULTRA HIGH FREQUENCY BAND
JESD-30 Code
R-CDFM-F6
R-CDFM-F4
Number of Elements
1
2
Number of Terminals
6
4
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
CERAMIC, METAL-SEALED COFIRED
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
FLAT
FLAT
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
NOT SPECIFIED
Transistor Application
AMPLIFIER
AMPLIFIER
Transistor Element Material
SILICON
SILICON
Base Number Matches
5
1
Part Package Code
DFM
Package Description
SOT-262A2, 4 PIN
HTS Code
8541.29.00.75
Additional Feature
HIGH RELIABILITY
Case Connection
SOURCE
Drain-source On Resistance-Max
0.3 Ω
Operating Temperature-Max
200 °C
Power Dissipation Ambient-Max
330 W
Power Dissipation-Max (Abs)
330 W
Power Gain-Min (Gp)
10 dB
Compare MRF175LU with alternatives
Compare BLF548,112 with alternatives