MR850
vs
1N5392-GT3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
BYTESONIC ELECTRONICS CO LTD
SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Additional Feature
HIGH RELIABILITY
HIGH RELIABILITY
Application
FAST RECOVERY
GENERAL PURPOSE
Breakdown Voltage-Min
50 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.25 V
JEDEC-95 Code
DO-27
DO-15
JESD-30 Code
O-PALF-W2
O-PALF-W2
Non-rep Pk Forward Current-Max
200 A
50 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Output Current-Max
3 A
1.5 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Reference Standard
MIL-STD-202
Rep Pk Reverse Voltage-Max
50 V
100 V
Reverse Current-Max
5 µA
Reverse Recovery Time-Max
0.15 µs
Reverse Test Voltage
50 V
Surface Mount
NO
NO
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
27
2
Package Description
O-PALF-W2
Moisture Sensitivity Level
1
Qualification Status
Not Qualified
Compare MR850 with alternatives
Compare 1N5392-GT3 with alternatives