MR813
vs
BT134W-600D
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
MOTOROLA INC
|
NXP SEMICONDUCTORS
|
| Package Description |
O-PALF-W2
|
SMALL OUTLINE, R-PDSO-G4
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.30.00.80
|
| Case Connection |
ISOLATED
|
MAIN TERMINAL 2
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
RECTIFIER DIODE
|
|
| Forward Voltage-Max (VF) |
1.2 V
|
|
| JESD-30 Code |
O-PALF-W2
|
R-PDSO-G4
|
| JESD-609 Code |
e0
|
e3
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
|
| Number of Terminals |
2
|
4
|
| Operating Temperature-Max |
150 °C
|
125 °C
|
| Operating Temperature-Min |
-65 °C
|
|
| Output Current-Max |
1 A
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
LONG FORM
|
SMALL OUTLINE
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
300 V
|
|
| Reverse Recovery Time-Max |
0.75 µs
|
|
| Surface Mount |
NO
|
YES
|
| Terminal Finish |
TIN LEAD
|
TIN
|
| Terminal Form |
WIRE
|
GULL WING
|
| Terminal Position |
AXIAL
|
DUAL
|
| Base Number Matches |
1
|
4
|
| Pbfree Code |
|
Yes
|
| Pin Count |
|
4
|
| Additional Feature |
|
SENSITIVE GATE
|
| Critical Rate of Rise of Off-State Voltage-Min |
|
5 V/us
|
| DC Gate Trigger Current-Max |
|
5 mA
|
| DC Gate Trigger Voltage-Max |
|
1.5 V
|
| Holding Current-Max |
|
10 mA
|
| Leakage Current-Max |
|
0.5 mA
|
| Moisture Sensitivity Level |
|
1
|
| Peak Reflow Temperature (Cel) |
|
260
|
| RMS On-state Current-Max |
|
1 A
|
| Repetitive Peak Off-state Leakage Current-Max |
|
500 µA
|
| Repetitive Peak Off-state Voltage |
|
600 V
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
| Trigger Device Type |
|
4 QUADRANT LOGIC LEVEL TRIAC
|
|
|
|
Compare MR813 with alternatives
Compare BT134W-600D with alternatives