MQSMCJLCE80AE3 vs MSMCJLCE75A feature comparison

MQSMCJLCE80AE3 Microsemi Corporation

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MSMCJLCE75A Microsemi Corporation

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Rohs Code Yes No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Part Package Code DO-214AB
Package Description R-PDSO-C2 SMCJ, 2 PIN
Pin Count 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 98 V 92.1 V
Breakdown Voltage-Min 88.7 V 83.3 V
Breakdown Voltage-Nom 93.35 V 87.7 V
Clamping Voltage-Max 129 V 121 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500 IEC-61000-4-2, 4-4, 4-5
Rep Pk Reverse Voltage-Max 80 V 75 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN TIN LEAD
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 2
Pbfree Code No
Additional Feature HIGH RELIABILITY
Diode Capacitance-Min 90 pF
Reverse Current-Max 5 µA
Reverse Test Voltage 75 V

Compare MQSMCJLCE80AE3 with alternatives

Compare MSMCJLCE75A with alternatives