MQSMCJLCE10ATR vs MSMCJLCE10A feature comparison

MQSMCJLCE10ATR Microsemi Corporation

Buy Now Datasheet

MSMCJLCE10A Microchip Technology Inc

Buy Now Datasheet
Rohs Code No No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer MICROSEMI CORP MICROCHIP TECHNOLOGY INC
Part Package Code DO-214AB
Package Description R-PDSO-C2 SMCJ, 2 PIN
Pin Count 2
Reach Compliance Code unknown compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature TR, 7 INCH: 750 HIGH RELIABILITY
Breakdown Voltage-Max 12.3 V 12.3 V
Breakdown Voltage-Min 11.1 V 11.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e0 e0
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500 IEC-61000-4-2, 4-4, 4-5
Rep Pk Reverse Voltage-Max 10 V 10 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD TIN LEAD
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 2
Factory Lead Time 40 Weeks
Samacsys Manufacturer Microchip
Breakdown Voltage-Nom 11.7 V
Clamping Voltage-Max 17 V
Diode Capacitance-Min 100 pF
Reverse Current-Max 5 µA
Reverse Test Voltage 10 V

Compare MQSMCJLCE10ATR with alternatives

Compare MSMCJLCE10A with alternatives