MQSMCJ5647A vs MXLSMCJLCE33AE3 feature comparison

MQSMCJ5647A Microsemi Corporation

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MXLSMCJLCE33AE3 Microchip Technology Inc

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Rohs Code No Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer MICROSEMI CORP MICROCHIP TECHNOLOGY INC
Part Package Code DO-214AB
Package Description R-PDSO-C2 ROHS COMPLIANT, PLASTIC, SMCJ, 2 PIN
Pin Count 2
Reach Compliance Code unknown compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Breakdown Voltage-Max 41 V 40.6 V
Breakdown Voltage-Min 37.1 V 36.7 V
Breakdown Voltage-Nom 39.05 V 38.65 V
Clamping Voltage-Max 53.9 V 53.3 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e0 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 33.3 V 33 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 2

Compare MQSMCJ5647A with alternatives

Compare MXLSMCJLCE33AE3 with alternatives