MQSMCGLCE33AE3TR vs MXSMCGLCE33A feature comparison

MQSMCGLCE33AE3TR Microsemi Corporation

Buy Now Datasheet

MXSMCGLCE33A Microchip Technology Inc

Buy Now Datasheet
Rohs Code Yes No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer MICROSEMI CORP MICROCHIP TECHNOLOGY INC
Part Package Code DO-215AB
Package Description R-PDSO-G2 PLASTIC PACKAGE-2
Pin Count 2
Reach Compliance Code unknown compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature TR, 7 INCH: 750 HIGH RELIABILITY
Breakdown Voltage-Max 40.6 V 40.6 V
Breakdown Voltage-Min 36.7 V 36.7 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-215AB DO-215AB
JESD-30 Code R-PDSO-G2 R-PDSO-G2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500 MIL-19500
Rep Pk Reverse Voltage-Max 33 V 33 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 2
Breakdown Voltage-Nom 38.65 V
Clamping Voltage-Max 53.3 V

Compare MQSMCGLCE33AE3TR with alternatives

Compare MXSMCGLCE33A with alternatives