MQSMCGLCE13AE3TR vs JAN1N5611 feature comparison

MQSMCGLCE13AE3TR Microsemi Corporation

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JAN1N5611 Microsemi Corporation

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Rohs Code Yes No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Part Package Code DO-215AB
Package Description R-PDSO-G2
Pin Count 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature TR, 7 INCH: 750
Breakdown Voltage-Max 15.9 V
Breakdown Voltage-Min 14.4 V 43.7 V
Breakdown Voltage-Nom 15.15 V
Clamping Voltage-Max 72.7 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-215AB
JESD-30 Code R-PDSO-G2 O-XALF-W2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 3 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500 MIL-19500/434C
Rep Pk Reverse Voltage-Max 13 V 40.3 V
Surface Mount YES NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN TIN LEAD
Terminal Form GULL WING WIRE
Terminal Position DUAL AXIAL
Base Number Matches 1 1
Pbfree Code No
Case Connection ISOLATED

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