MQSMCGLCE13AE3TR
vs
JAN1N5611
feature comparison
All Stats
Differences Only
Rohs Code
Yes
No
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
MICROSEMI CORP
MICROSEMI CORP
Part Package Code
DO-215AB
Package Description
R-PDSO-G2
Pin Count
2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
TR, 7 INCH: 750
Breakdown Voltage-Max
15.9 V
Breakdown Voltage-Min
14.4 V
43.7 V
Breakdown Voltage-Nom
15.15 V
Clamping Voltage-Max
72.7 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-215AB
JESD-30 Code
R-PDSO-G2
O-XALF-W2
JESD-609 Code
e3
e0
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
175 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
UNSPECIFIED
Package Shape
RECTANGULAR
ROUND
Package Style
SMALL OUTLINE
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
3 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
MIL-19500
MIL-19500/434C
Rep Pk Reverse Voltage-Max
13 V
40.3 V
Surface Mount
YES
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
TIN LEAD
Terminal Form
GULL WING
WIRE
Terminal Position
DUAL
AXIAL
Base Number Matches
1
1
Pbfree Code
No
Case Connection
ISOLATED
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