MQSMCG5659AE3 vs MXLSMCGLCE100AE3TR feature comparison

MQSMCG5659AE3 Microsemi Corporation

Buy Now Datasheet

MXLSMCGLCE100AE3TR Microsemi Corporation

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Part Package Code DO-215AB DO-215AB
Package Description R-PDSO-G2 R-PDSO-G2
Pin Count 2 2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature HIGH RELIABILITY TR, 7 INCH: 750
Breakdown Voltage-Max 126 V 123 V
Breakdown Voltage-Min 114 V 111 V
Breakdown Voltage-Nom 120 V 117 V
Clamping Voltage-Max 165 V 162 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-215AB DO-215AB
JESD-30 Code R-PDSO-G2 R-PDSO-G2
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 102 V 100 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 1
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare MQSMCG5659AE3 with alternatives

Compare MXLSMCGLCE100AE3TR with alternatives