MQSMCG5635 vs MXSMCJLCE10 feature comparison

MQSMCG5635 Microsemi Corporation

Buy Now Datasheet

MXSMCJLCE10 Microsemi Corporation

Buy Now Datasheet
Rohs Code No No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Part Package Code DO-215AB DO-214AB
Package Description R-PDSO-G2 PLASTIC PACKAGE-2
Pin Count 2 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Max 13.2 V 13.6 V
Breakdown Voltage-Min 10.8 V 11.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-215AB DO-214AB
JESD-30 Code R-PDSO-G2 R-PDSO-C2
JESD-609 Code e0 e0
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 9.72 V 10 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD TIN LEAD
Terminal Form GULL WING C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Pbfree Code No
Breakdown Voltage-Nom 12.35 V
Clamping Voltage-Max 18.8 V
Reference Standard MIL-19500

Compare MQSMCG5635 with alternatives

Compare MXSMCJLCE10 with alternatives