MQSMBJ90TR vs MASMBJP6KE110 feature comparison

MQSMBJ90TR Microsemi Corporation

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MASMBJP6KE110 Microsemi Corporation

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Rohs Code No No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Part Package Code DO-214AA DO-214AA
Package Description R-PDSO-C2 R-PDSO-C2
Pin Count 2 2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature TR, 7 INCH: 750
Breakdown Voltage-Max 122 V 121 V
Breakdown Voltage-Min 100 V 99 V
Breakdown Voltage-Nom 111 V
Clamping Voltage-Max 160 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e0 e0
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.38 W 1.38 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500
Rep Pk Reverse Voltage-Max 90 V 89.2 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD TIN LEAD
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Pbfree Code No

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Compare MASMBJP6KE110 with alternatives