MQSMBJ12A vs SMBG12A feature comparison

MQSMBJ12A Microsemi Corporation

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SMBG12A International Semiconductor Inc

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Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP INTERNATIONAL SEMICONDUCTOR INC
Part Package Code DO-214AA
Package Description R-PDSO-C2 R-PDSO-G2
Pin Count 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 14.7 V 14.7 V
Breakdown Voltage-Min 13.3 V 13.3 V
Breakdown Voltage-Nom 14 V 14 V
Clamping Voltage-Max 19.9 V 19.9 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-215AA
JESD-30 Code R-PDSO-C2 R-PDSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -40 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.38 W 1 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 12 V 12 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD
Terminal Form C BEND GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 5
Reverse Current-Max 5 µA

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