MQSMBG7.0ATR vs MASMBGP6KE8.2AE3 feature comparison

MQSMBG7.0ATR Microsemi Corporation

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MASMBGP6KE8.2AE3 Microsemi Corporation

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Rohs Code No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Part Package Code DO-215AA
Package Description PLASTIC PACKAGE-2 R-PDSO-G2
Pin Count 2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature TR, 7 INCH: 750
Breakdown Voltage-Max 8.6 V 8.61 V
Breakdown Voltage-Min 7.78 V 7.79 V
Breakdown Voltage-Nom 8.19 V
Clamping Voltage-Max 12 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-215AA DO-215AA
JESD-30 Code R-PDSO-G2 R-PDSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.38 W 1.38 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 7 V 7.02 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 1

Compare MQSMBG7.0ATR with alternatives

Compare MASMBGP6KE8.2AE3 with alternatives