MQSMBG58TR vs MASMBGP6KE75E3TR feature comparison

MQSMBG58TR Microsemi Corporation

Buy Now Datasheet

MASMBGP6KE75E3TR Microsemi Corporation

Buy Now Datasheet
Rohs Code No Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Part Package Code DO-215AA DO-215AA
Package Description PLASTIC PACKAGE-2 R-PDSO-G2
Pin Count 2 2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature TR, 7 INCH: 750 TR, 7 INCH: 750
Breakdown Voltage-Max 78.7 V 82.5 V
Breakdown Voltage-Min 64.4 V 67.5 V
Breakdown Voltage-Nom 71.55 V
Clamping Voltage-Max 103 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-215AA DO-215AA
JESD-30 Code R-PDSO-G2 R-PDSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.38 W 1.38 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 58 V 60.7 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 1

Compare MQSMBG58TR with alternatives

Compare MASMBGP6KE75E3TR with alternatives