MQSMAJP4KE160CAE3TR vs MSP1N6279TR feature comparison

MQSMAJP4KE160CAE3TR Microsemi Corporation

Buy Now Datasheet

MSP1N6279TR Microsemi Corporation

Buy Now Datasheet
Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Part Package Code DO-214AC
Package Description R-PDSO-C2 O-PALF-W2
Pin Count 2 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 168 V 24.2 V
Breakdown Voltage-Min 152 V 19.8 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AC
JESD-30 Code R-PDSO-C2 O-PALF-W2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 400 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE LONG FORM
Polarity BIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.52 W 1.52 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 136 V 17.8 V
Surface Mount YES NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN TIN LEAD
Terminal Form C BEND WIRE
Terminal Position DUAL AXIAL
Base Number Matches 1 1
Manufacturer Package Code CASE 1
Breakdown Voltage-Nom 22 V
Case Connection ISOLATED
Clamping Voltage-Max 31.9 V

Compare MQSMAJP4KE160CAE3TR with alternatives

Compare MSP1N6279TR with alternatives