MQ1N8168US vs MV1N8168 feature comparison

MQ1N8168US Microchip Technology Inc

Buy Now Datasheet

MV1N8168 Microchip Technology Inc

Buy Now Datasheet
Rohs Code No No
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROCHIP TECHNOLOGY INC
Package Description MELF-2
Reach Compliance Code compliant compliant
Factory Lead Time 25 Weeks
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Breakdown Voltage-Min 48.5 V 48.5 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 70.1 V 70.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LELF-R2 O-LALF-W2
Non-rep Peak Rev Power Dis-Max 150 W 150 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Reference Standard IEC-61000-4-2, 4-4; MIL-19500 IEC-61000-4-2,4-4,4-5
Rep Pk Reverse Voltage-Max 43 V 43 V
Surface Mount YES NO
Technology AVALANCHE AVALANCHE
Terminal Form WRAP AROUND WIRE
Terminal Position END AXIAL
Base Number Matches 1 3
Reverse Current-Max 0.5 µA

Compare MQ1N8168US with alternatives

Compare MV1N8168 with alternatives