MQ1N6303E3 vs 1N6303TRE3 feature comparison

MQ1N6303E3 Microsemi Corporation

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1N6303TRE3 Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Package Description O-PALF-W2
Pin Count 2
Manufacturer Package Code CASE 1
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 198 V
Breakdown Voltage-Min 162 V
Breakdown Voltage-Nom 180 V 180 V
Case Connection ISOLATED
Clamping Voltage-Max 258 V 258 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1500 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.52 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 146 V 146 V
Surface Mount NO NO
Technology AVALANCHE
Terminal Finish MATTE TIN
Terminal Form WIRE
Terminal Position AXIAL
Base Number Matches 1 1

Compare MQ1N6303E3 with alternatives

Compare 1N6303TRE3 with alternatives