MPT-8C
vs
1V5KE10A
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
LITTELFUSE INC
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
LOW IMPEDANCE
Breakdown Voltage-Min
9.4 V
9.5 V
Breakdown Voltage-Nom
9.4 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
11.6 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-13
DO-201AE
JESD-30 Code
O-MALF-W2
O-XALF-W2
JESD-609 Code
e0
e3
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
METAL
UNSPECIFIED
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
5 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
8 V
8.55 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
Tin/Lead (Sn/Pb)
Matte Tin (Sn)
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
2
3
Breakdown Voltage-Max
10.5 V
Moisture Sensitivity Level
1
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Peak Reflow Temperature (Cel)
260
Reference Standard
UL RECOGNIZED
Time@Peak Reflow Temperature-Max (s)
10
Compare MPT-8C with alternatives
Compare 1V5KE10A with alternatives