MPSH11
vs
MPSH11D27Z
feature comparison
All Stats
Differences Only
Rohs Code
No
Yes
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
FAIRCHILD SEMICONDUCTOR CORP
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.75
Collector-Base Capacitance-Max
0.7 pF
0.7 pF
Collector-Emitter Voltage-Max
25 V
25 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
60
60
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
VERY HIGH FREQUENCY BAND
JEDEC-95 Code
TO-92
TO-92
JESD-30 Code
O-PBCY-T3
O-PBCY-T3
JESD-609 Code
e0
e3
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Polarity/Channel Type
NPN
NPN
Power Dissipation Ambient-Max
0.35 W
0.35 W
Power Dissipation-Max (Abs)
0.35 W
0.35 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
Matte Tin (Sn)
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
BOTTOM
BOTTOM
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
650 MHz
650 MHz
VCEsat-Max
0.5 V
Base Number Matches
1
1
Package Description
CYLINDRICAL, O-PBCY-T3
Additional Feature
LOW NOISE
Collector Current-Max (IC)
0.05 A
Transistor Application
AMPLIFIER
Compare MPSH11 with alternatives
Compare MPSH11D27Z with alternatives