MPLAD30KP64A/TR
vs
MPLAD30KP64AE3TR
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
MICROSEMI CORP
Package Description
R-PSSO-G1
R-PSSO-G1
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
HIGH RELIABILITY
HIGH RELIABILITY
Breakdown Voltage-Max
78.6 V
78.6 V
Breakdown Voltage-Min
71.1 V
71.1 V
Breakdown Voltage-Nom
74.85 V
74.85 V
Case Connection
CATHODE
CATHODE
Clamping Voltage-Max
103 V
103 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PSSO-G1
R-PSSO-G1
JESD-609 Code
e0
e3
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
30000 W
30000 W
Number of Elements
1
1
Number of Terminals
1
1
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
2.5 W
2.5 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
64 V
64 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
MATTE TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Base Number Matches
1
2
Pbfree Code
Pin Count
1
Compare MPLAD30KP64A/TR with alternatives
Compare MPLAD30KP64AE3TR with alternatives