MPLAD30KP51CAE3
vs
MPLAD30KP51CA
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
MICROCHIP TECHNOLOGY INC
|
| Package Description |
S-PSSO-G1
|
S-PSSO-G1
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8542.32.00.51
|
| Factory Lead Time |
40 Weeks
|
40 Weeks
|
| Additional Feature |
HIGH RELIABILITY
|
HIGH RELIABILITY
|
| Breakdown Voltage-Max |
62.7 V
|
62.7 V
|
| Breakdown Voltage-Min |
56.7 V
|
56.7 V
|
| Breakdown Voltage-Nom |
59.7 V
|
59.7 V
|
| Case Connection |
CATHODE
|
CATHODE
|
| Clamping Voltage-Max |
82.4 V
|
82.4 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
S-PSSO-G1
|
S-PSSO-G1
|
| JESD-609 Code |
e3
|
e0
|
| Moisture Sensitivity Level |
1
|
1
|
| Non-rep Peak Rev Power Dis-Max |
30000 W
|
30000 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
1
|
1
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
SQUARE
|
SQUARE
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
| Power Dissipation-Max |
2.5 W
|
2.5 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reference Standard |
MIL-19500
|
MIL-19500
|
| Rep Pk Reverse Voltage-Max |
51 V
|
51 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Finish |
MATTE TIN
|
TIN LEAD
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Base Number Matches |
2
|
4
|
| Samacsys Manufacturer |
|
Microchip
|
|
|
|