MPLAD30KP48CAE3
vs
MVPLAD30KP48CAE3TR
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Yes
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
MICROSEMI CORP
Package Description
S-PSSO-G1
ROHS COMPLIANT, PLASTIC PACKAGE-1
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Factory Lead Time
40 Weeks
Additional Feature
HIGH RELIABILITY
Breakdown Voltage-Max
58.9 V
58.9 V
Breakdown Voltage-Min
53.3 V
53.3 V
Breakdown Voltage-Nom
56.1 V
56.1 V
Case Connection
CATHODE
Clamping Voltage-Max
77.4 V
77.4 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
S-PSSO-G1
S-PSSO-G1
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
30000 W
30000 W
Number of Elements
1
1
Number of Terminals
1
1
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
SQUARE
SQUARE
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
2.5 W
2.5 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
MIL-19500
Rep Pk Reverse Voltage-Max
48 V
48 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
MATTE TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Base Number Matches
2
1
Pin Count
1
Compare MPLAD30KP48CAE3 with alternatives
Compare MVPLAD30KP48CAE3TR with alternatives