MPLAD30KP48CAE3 vs MVPLAD30KP48CAE3TR feature comparison

MPLAD30KP48CAE3 Microchip Technology Inc

Buy Now Datasheet

MVPLAD30KP48CAE3TR Microsemi Corporation

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROSEMI CORP
Package Description S-PSSO-G1 ROHS COMPLIANT, PLASTIC PACKAGE-1
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Factory Lead Time 40 Weeks
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Max 58.9 V 58.9 V
Breakdown Voltage-Min 53.3 V 53.3 V
Breakdown Voltage-Nom 56.1 V 56.1 V
Case Connection CATHODE
Clamping Voltage-Max 77.4 V 77.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code S-PSSO-G1 S-PSSO-G1
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 30000 W 30000 W
Number of Elements 1 1
Number of Terminals 1 1
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape SQUARE SQUARE
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 2.5 W 2.5 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500
Rep Pk Reverse Voltage-Max 48 V 48 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Base Number Matches 2 1
Pin Count 1

Compare MPLAD30KP48CAE3 with alternatives

Compare MVPLAD30KP48CAE3TR with alternatives