MPLAD30KP22AE3 vs MXPLAD30KP22AE3/TR feature comparison

MPLAD30KP22AE3 Microchip Technology Inc

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MXPLAD30KP22AE3/TR Microchip Technology Inc

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROCHIP TECHNOLOGY INC
Package Description S-PSSO-G1 S-PSSO-G1
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Factory Lead Time 40 Weeks
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Max 26.9 V 26.9 V
Breakdown Voltage-Min 24.4 V 24.4 V
Breakdown Voltage-Nom 25.65 V 25.65 V
Case Connection CATHODE
Clamping Voltage-Max 36.4 V 36.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code S-PSSO-G1 S-PSSO-G1
Non-rep Peak Rev Power Dis-Max 30000 W 30000 W
Number of Elements 1 1
Number of Terminals 1 1
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape SQUARE SQUARE
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 2.5 W 2.5 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500
Rep Pk Reverse Voltage-Max 22 V 22 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 2 1
JESD-609 Code e3
Terminal Finish MATTE TIN

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Compare MXPLAD30KP22AE3/TR with alternatives