MPLAD30KP100CAE3 vs MAPLAD30KP100CAE3/TR feature comparison

MPLAD30KP100CAE3 Microchip Technology Inc

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MAPLAD30KP100CAE3/TR Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROSEMI CORP
Package Description S-PSSO-G1 S-PSSO-G1
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Factory Lead Time 40 Weeks
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Max 123 V 123 V
Breakdown Voltage-Min 111 V 111 V
Breakdown Voltage-Nom 117 V 117 V
Case Connection CATHODE
Clamping Voltage-Max 162 V 162 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code S-PSSO-G1 S-PSSO-G1
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 30000 W 30000 W
Number of Elements 1 1
Number of Terminals 1 1
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape SQUARE SQUARE
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 2.5 W 2.5 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500
Rep Pk Reverse Voltage-Max 100 V 100 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Base Number Matches 2 2

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Compare MAPLAD30KP100CAE3/TR with alternatives