MPLAD18KP7.0AE3
vs
MXLPLAD18KP7.0A
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
MICROCHIP TECHNOLOGY INC
Reach Compliance Code
compliant
compliant
Breakdown Voltage-Max
8.6 V
8.6 V
Breakdown Voltage-Min
7.78 V
7.78 V
Breakdown Voltage-Nom
8.19 V
8.19 V
Case Connection
CATHODE
CATHODE
Clamping Voltage-Max
12 V
12 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
S-PSSO-G1
S-PSSO-G1
Non-rep Peak Rev Power Dis-Max
18000 W
18000 W
Number of Elements
1
1
Number of Terminals
1
1
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
SQUARE
SQUARE
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
2.5 W
2.5 W
Reference Standard
AEC-Q101; MIL-STD-750
AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-19500
Rep Pk Reverse Voltage-Max
7 V
7 V
Reverse Current-Max
3000 µA
Reverse Test Voltage
7 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
2
4
Additional Feature
HIGH RELIABILITY
Compare MPLAD18KP7.0AE3 with alternatives
Compare MXLPLAD18KP7.0A with alternatives