MPLAD18KP7.0AE3 vs MAPLAD18KP7.0AE3 feature comparison

MPLAD18KP7.0AE3 Microchip Technology Inc

Buy Now Datasheet

MAPLAD18KP7.0AE3 Microchip Technology Inc

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant compliant
Breakdown Voltage-Max 8.6 V 8.6 V
Breakdown Voltage-Min 7.78 V 7.78 V
Breakdown Voltage-Nom 8.19 V 8.19 V
Case Connection CATHODE CATHODE
Clamping Voltage-Max 12 V 12 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code S-PSSO-G1 S-PSSO-G1
Non-rep Peak Rev Power Dis-Max 18000 W 18000 W
Number of Elements 1 1
Number of Terminals 1 1
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape SQUARE SQUARE
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 2.5 W 2.5 W
Reference Standard AEC-Q101; MIL-STD-750 AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-19500
Rep Pk Reverse Voltage-Max 7 V 7 V
Reverse Current-Max 3000 µA 3000 µA
Reverse Test Voltage 7 V 7 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 2 2
Factory Lead Time 40 Weeks
Additional Feature HIGH RELIABILITY

Compare MPLAD18KP7.0AE3 with alternatives

Compare MAPLAD18KP7.0AE3 with alternatives