MPLAD18KP40AE3 vs MXLPLAD18KP40A feature comparison

MPLAD18KP40AE3 Microchip Technology Inc

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MXLPLAD18KP40A Microchip Technology Inc

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Rohs Code Yes No
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant compliant
Factory Lead Time 40 Weeks
Breakdown Voltage-Max 49.1 V 49.1 V
Breakdown Voltage-Min 44.4 V 44.4 V
Breakdown Voltage-Nom 46.75 V 46.75 V
Case Connection CATHODE CATHODE
Clamping Voltage-Max 64.5 V 64.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code S-PSSO-G1 S-PSSO-G1
Non-rep Peak Rev Power Dis-Max 18000 W 18000 W
Number of Elements 1 1
Number of Terminals 1 1
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape SQUARE SQUARE
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 2.5 W 2.5 W
Reference Standard AEC-Q101; MIL-STD-750 AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-19500
Rep Pk Reverse Voltage-Max 40 V 40 V
Reverse Current-Max 10 µA
Reverse Test Voltage 40 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Base Number Matches 1 2
Additional Feature HIGH RELIABILITY

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