MPLAD15KP200ATR vs MAPLAD15KP200AE3 feature comparison

MPLAD15KP200ATR Microchip Technology Inc

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MAPLAD15KP200AE3 Microsemi Corporation

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Rohs Code No Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROSEMI CORP
Package Description R-PSSO-G1
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Breakdown Voltage-Max 245 V 245 V
Breakdown Voltage-Min 222 V 222 V
Breakdown Voltage-Nom 233.5 V 233.5 V
Case Connection CATHODE CATHODE
Clamping Voltage-Max 322 V 322 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PSSO-G1 S-PSSO-G1
JESD-609 Code e0 e3
Non-rep Peak Rev Power Dis-Max 15000 W 15000 W
Number of Elements 1 1
Number of Terminals 1 1
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR SQUARE
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 2.5 W 2.5 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500 IEC-61000-4-2, 4-4, 4-5; MIL-19500
Rep Pk Reverse Voltage-Max 200 V 200 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Base Number Matches 2 2
Pbfree Code Yes
Pin Count 1

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