MP2506(W)
vs
GBPC2506-W
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Contact Manufacturer
Active
Ihs Manufacturer
GALAXY SEMI-CONDUCTOR CO LTD
FORMOSA MICROSEMI CO LTD
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Breakdown Voltage-Min
600 V
Configuration
BRIDGE, 4 ELEMENTS
BRIDGE, 4 ELEMENTS
Diode Type
BRIDGE RECTIFIER DIODE
BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF)
1.1 V
1.1 V
Non-rep Pk Forward Current-Max
300 A
350 A
Number of Elements
4
4
Number of Phases
1
1
Operating Temperature-Max
125 °C
150 °C
Output Current-Max
25 A
25 A
Peak Reflow Temperature (Cel)
260
NOT SPECIFIED
Rep Pk Reverse Voltage-Max
600 V
600 V
Surface Mount
NO
NO
Base Number Matches
2
2
Package Description
S-PUFM-W4
HTS Code
8541.10.00.80
Diode Element Material
SILICON
JESD-30 Code
S-PUFM-W4
Number of Terminals
4
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
SQUARE
Package Style
FLANGE MOUNT
Reference Standard
UL RECOGNIZED
Terminal Form
WIRE
Terminal Position
UPPER
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare MP2506(W) with alternatives
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